Comprehensive nanoscopic analysis of tungsten carbide/Oxygenated-diamond contacts for Schottky barrier diodes

AlGaN/GaN Schottky Barrier Diodes Employing Diamond-like Carbon passivation

AlGaN/GaN Schottky Barrier Diodes (SBDs) employing the Diamond-like Carbon (DLC) passivation was proposed. The reverse blocking characteristics of the AlGaN/GaN SBD is degraded by the electron trapping effect through the surface trap states. In order to suppress the electron trapping effect and increase the breakdown voltage of AlGaN/GaN SBDs, the surface passivation or treatment should be perf...

Development of Diamond Schottky Barrier Diode

Diamond, which has excellent physical properties, is attractive for use in industrial applications. Because diamond is rated the highest for hardness and heat conductivity among all known materials, it is widely used for products such as abrasive grains, cutting tools, and heatsinks. Diamond also exhibits excellent transparency even in the ultraviolet range and can be applied to optical tools. ...

Carbon nanotube Schottky diodes using Ti-Schottky and Pt-Ohmic contacts for high frequency applications.

We have demonstrated Schottky diodes using semiconducting single-walled nanotubes (s-SWNTs) with titanium Schottky and platinum Ohmic contacts for high-frequency applications. The diodes are fabricated using angled evaporation of dissimilar metal contacts over an s-SWNT. The devices demonstrate rectifying behavior with large reverse bias breakdown voltages of greater than -15 V. To decrease the...

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Characterization of graphene-silicon Schottky barrier diodes using impedance spectroscopy

Articles you may be interested in Schottky barrier inhomogeneity for graphene/Si-nanowire arrays/n-type Si Schottky diodes Appl.